Acceptance of transient and hard-melting metal oxide tapes and research for getting memorystore

Author: anzor arevadze
Keywords: memorystore, X-ray analysis, magnetron emission
Annotation:

It is discussed getting actual layer memorystore and research technological processes of transitional metal hafnium and hardly meltable metal wolfram oxides. It is done technological way of getting memorystore. It is done two layers oxides memorystore in one process. magnetron emission in oxygen and argon area with different partial pressure. It is got each oxygen layer at the same technological process. In our research it is solved different important tasks such as getting active layer with magnetron emission in different technological condition, X-ray structure analyse spectrum insert to get memorystore, measurement of voltage-capacity(C-V) and voltage-current (I-U)dependence. It is Sumed up appropriate results of mesuarement and concluded that accepted memorystote satisfy requirements.